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Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions

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Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions

Non-Repetitive Peak Forward Surge Current : 76A

Reverse Leakage Current (Ir) : 2uA@650V

Operating Junction Temperature Range : -55℃~+175℃

Voltage - DC Reverse (Vr) (Max) : 650V

Voltage - Forward(Vf@If) : 1.45V@8A

Current - Rectified : 8A

Description : SiC Diode 650V 8A Through Hole TO-220-2

Mfr. Part # : BCH65S08D3

Model Number : BCH65S08D3

Package : TO-220-2

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Product Overview

The BCH65S08D3 is a 650V, 8A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for applications requiring high power efficiency, featuring negligible reverse recovery, high-speed switching, and a positive temperature coefficient. It is suitable for high-frequency operations with low heat dissipation requirements, contributing to reduced system size and cost. Key applications include switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies.

Product Attributes

Brand: Bestirpower
Material: Silicon Carbide (SiC)
Technology: Silicon Carbide Schottky Diode
Compliance: RoHS compliant

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
General Parameters
VRRM	Repetitive Peak Reverse Voltage				650	V
IF	Forward Current	TC = 25			25	A
		TC = 135			11	A
		TC = 154			8	A
IF,SM	Non-Repetitive Forward Surge Current	TC = 25, tp = 10 ms			76	A
		TC = 110, tp = 10 ms			68	A
IF,RM	Repetitive Peak Forward Surge Current	TC = 25, tp = 10 ms			67	A
I2dt value	I2t	TC = 25, tp = 10 ms		32		As
		TC = 110, tp = 10 ms		28		As
Ptot	Power Dissipation	TC = 25			100	W
		TC = 110			43	W
		TC = 150			16	W
TJ,TSTG	Operating Junction and Storage Temperature		-55		175
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case	Typ.		1.495		/W
Electrical Characteristics
VDC	DC blocking voltage		650	-	-	V
VF	Forward Voltage	IF=8ATJ=25	-	1.45	1.7	V
		IF=8ATJ=175	-	1.75	-	V
IR	Reverse Current	VR = 650 V, TJ= 25	-	2	20	A
		VR = 650 V, TJ= 175	-	40	-	A
QC	Total Capacitive Charge	VR = 400 V, TJ = 25	-	22	-	nC
C	Total Capacitance	VR = 0 V, f = 1MHz	-	440	-	pF
		VR = 200 V, f = 1MHz	-	44	-	pF
		VR = 400 V, f = 1MHz	-	38	-	pF
EC	Capacitance Stored Energy	VR = 400 V, TC = 25	-	5.8	-	J
Ordering Information
Part Number	Top Marking	Package	Packing Method	Quantity
BCH65S08D3	BCH65S08D3	TO220-2	Tube	50 units

2504101957_Bestirpower-BCH65S08D3_C46472734.pdf

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