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Glass passivated chip junction diode amsem MUR220S with repetitive peak reverse voltage of 200 volts

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Glass passivated chip junction diode amsem MUR220S with repetitive peak reverse voltage of 200 volts

Non-Repetitive Peak Forward Surge Current : 50A

Reverse Leakage Current (Ir) : 5uA

Reverse Recovery Time (trr) : 35ns

Operating Junction Temperature Range : -55℃~+150℃

Voltage - DC Reverse (Vr) (Max) : 200V

Diode Configuration : Independent

Voltage - Forward(Vf@If) : 950mV@2A

Current - Rectified : 2A

Description : 50A 35ns 200V Independent 950mV@2A 2A SMB Single Diodes RoHS

Mfr. Part # : MUR220S

Model Number : MUR220S

Package : SMB

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Product Overview

The MUR220S is an Ultra-Fast Recovery Rectifier Diode from Anhui Anmei Semiconductor Co., Ltd. It features low power loss, ultra-fast recovery time for high efficiency, a glass-passivated chip junction, low leakage current, and high forward surge capability. It is designed for high frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment. The product meets MSL level 1, per J-STD-020, with a maximum peak of 260 C.

Product Attributes

Brand: Anhui Anmei Semiconductor Co.,Ltd.
Document Number: 804012
Revision: 21-Mar-20
Material: Glass passivated chip junction
Packaging: DO-214AA (SMB)
Certifications: UL 94 V-0 flammability rating, RoHS-compliant, Meets MSL level 1, per J-STD-020

Technical Specifications

Parameter	Symbol	Unit	Conditions	MUR220S
Repetitive Peak Reverse Voltage	VRRM	V		200
Average Forward Current	I F(AV)	A	Ta=25	2.0
Surge(Non-repetitive)Forward Current	IFSM	A	Ta=25, 60Hz Half-sine wave, 1 cycle	60
Storage Temperature	Tstg			-55 ~ +150
Junction Temperature	Tj			-55 ~ +150
Peak Forward Voltage	VFM	V	IF=2.0A	0.95
Peak Reverse Current	IRRM1	A	VRM=VRRM, Ta=25	5.0
Peak Reverse Current	IRRM2	A	Ta=125	300
Reverse Recovery time	Trr	ns	IF =0.5A, IR =1A, RR =0.25A	35
Thermal Resistance(Typical)	RJ-L	/W	Between junction and ambient	20
Typical junction capacitance	Cj	pF	Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C	25
Non repetitive reverse avalanche energy	ER	mJ	I(BR)R = 0.7 A, inductive load	10

2410122015_amsem-MUR220S_C18336928.pdf

China Glass passivated chip junction diode amsem MUR220S with repetitive peak reverse voltage of 200 volts factory

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